描述

Original NCEP039N10M 135A 100V TO-220 MOSFET

NCEP039N10M Info:

MOSFET NCEP039N10M TO-220 uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg for high-frequency switching and synchronous rectification.

1. Type Designator: NCEP039N10M
2. Type of Transistor: MOSFET
3. Type of Control Channel: N-Channel
4. Maximum Power Dissipation (Pd): 220 W
5. Maximum Drain-Source Voltage |Vds|: 100 V
6. Maximum Gate-Source Voltage |Vgs|: 20 V
7. Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
8. Maximum Drain Current |Id|: 135 A
9. Maximum Junction Temperature (Tj): 175 °C
10. Total Gate Charge (Qg): 116 nC
11. Rise Time (tr): 11.5 nS
12. Drain-Source Capacitance (Cd): 618 pF
13. Maximum Drain-Source On-State Resistance (Rds): 0.0039 Ohm
14. Package: TO-220

Application

1. DC/DC Converter
2. Ideal for high-frequency switching and synchronous rectification

General Features

1. VDS=100V,ID=135A
    1.  RDS(ON)=3.65mΩ , typical (TO-220)@ VGS=10V
    2. RDS(ON)=3.5mΩ , typical (TO-263)@ VGS=10V

2. Excellent gate charge x RDS(on) product(FOM)

3. Very low on-resistance RDS(on)

4. 175 °C operating temperature

5. Pb-free lead plating

6. Pb-free Mold Compound