•  SKY13290-313LF: 20 MHz-2.5 GHz, 10 W pHEMT SPDT Switch

Introduce:
The SKY13290-313LF is a high power, pHEMT Single Pole Double Throw (SPDT) switch. The switch is designed for use in systems operating from 20 MHz to 2.5 GHz for which low loss, high isolation, low control voltage, and ultra-miniature package size
are required. The device is controlled with positive, negative, or a combination of both voltages. The RF signal paths within the device are fully bilateral. The SKY13290-313LF is manufactured in a compact, low-cost 2 x 3 mm, 6-pin Quad Flat No-Lead (QFN) package.

Applications
1. Wireless infrastructure: WLAN, HLAN, DBS, broadband, cellular
base stations
2. Test instrumentation
3. Cable television

Features
1. Broadband frequency range: 0.1 to 6.0 GHz
2. Small signal gain = 20 dB typical @ 2 GHz
3. High OIP3: +33 dBm typical
4. OP1dB = +20 dBm typical @ 2 GHz
5. Input and output impedance: 50 Ω nominal
6. Single, positive DC supply voltage
7. SOT-89 (4-pin, 1.5 x 4.0 mm) package (MSL1, 260 °C per JEDEC J-STD-020)

• SKY67151-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier

The SKY67151-396LF is GaAs, pHEMT low-noise amplifier (LNA) with an active bias, high linearity, superior gain, and industryleading noise figure (NF) performance from 700 to 3800 MHz.

The internal active bias circuitry provides stable performance over temperature and process variation. The device offers the ability to externally adjust supply current. Supply voltage is applied to the RFOUT/VDD pin through an RF choke inductor. The RFIN and RFOUT/VDD pins should be DC blocked to ensure proper operation.

Applications:
• LTE, GSM, WCDMA, HSDPA macro and micro base stations
• L and S band ultra low-noise receivers
• Cellular repeaters, DAS and RRH/RRUs
• High temperature transceiver applications to +105 °C

Features:
• Ultra-low Evaluation Board NF:
− 0.25 dB @ 849 MHz
− 0.35 dB @ 1850 MHz
− 0.50 dB @ 2500 MHz
− 0.70 dB @ 3600 MHz
• High OIP3 performance: >+34 dBm over 700 to 3800 MHz
• Adjustable supply current from 30 to 100 mA
• Flexible bias voltage: 3 to 5 V
• Temperature and process-stable active bias
• Miniature DFN (8-pin, 2 x 2 mm) package (MSL1 @ 260 °C per JEDEC J-STD-020)

• SKY65017-70LF: 0.1 to 6.0 GHz InGaP Cascadable Amplifier

1. Core Parameters
The SKY65017-70LF is a high-performance broadband amplifier manufactured using the InGaP HBT process and designed for RF applications that require wide bandwidth and high gain. The product is packaged in a miniature SOT-89-3 package with 50 Ω input/output impedance, which is convenient for cascading and does not require an external impedance matching network. Its high linearity and low noise characteristics make it an ideal choice for wireless communications, industrial RF, and test equipment.

Frequency range: 0.1 GHz ~ 6 GHz
Gain: 20 dB (typical @ 2 GHz)
Output power: +20 dBm (P1dB @ 2 GHz)
Noise figure: 4.5 dB (typical @ 2 GHz)
Operating voltage: 4.5V ~ 5.5V
Operating current: 120 mA (typical)
Package type: SOT-89-3 (surface mount)
Operating temperature range: -40°C ~ +85°C

2. Technical advantages
1. Wide bandwidth coverage: supports 0.1 GHz to 6 GHz, covering multi-band communication needs.
2. High gain design: 20 dB gain (@ 2 GHz) improves signal transmission efficiency.
3. Cascading convenience: 50 Ω impedance matching simplifies multi-stage amplifier circuit design.
4. High reliability: InGaP HBT process ensures stable performance and long life.
5. Wide temperature adaptability: -40°C to +85°C operating range meets the needs of harsh environments.

3. Typical application scenarios
1. Wireless communication: WLAN routers, DBS (Direct Broadcast Satellite) receivers, base station front-end modules.
2. Industrial testing: RF signal source, spectrum analyzer, network analyzer.
3. Automotive electronics: vehicle radar, telematics modules (such as 4G/5G T-Box).
4. Internet of Things (IoT): Low Power Wide Area Network (LPWAN) devices, smart sensors.

•  SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor

1. Product Overview
SKY65050-372LF is a low noise enhanced pseudo high electron mobility transistor (pHEMT) designed for RF applications that require ultra-low noise and high frequency performance. This product uses SC-70 (SOT-143-4) package, has wide bandwidth, high linearity and low power consumption, and is suitable for wireless communication, satellite communication and test and measurement equipment.

Frequency range: 0.45 GHz ~ 6 GHz
Gain: 15.5 dB (typical @ 2.4 GHz)
Output power: 8 dBm (typical)
Noise figure: 0.4 dB (typical @ 2 GHz)
Operating voltage: 6 V (maximum)
Operating current: 55 mA (typical @ 2.4 GHz)
Package type: SOT-143-4 (SC-70, 4-pin)
Operating temperature range: -40°C ~ +85°C

2. Technical advantages
1. Ultra-low noise: The noise figure is only 0.4 dB (@ 2 GHz), which improves the receiving sensitivity.
2. Wideband coverage: Supports 0.45 GHz to 6 GHz, covering multi-band communication needs.
3. High reliability: pHEMT process ensures stable performance and long life.
4. Low power consumption: 55 mA typical operating current (@ 2.4 GHz) optimizes power consumption efficiency.
5. Miniaturized package: SC-70 package is suitable for compact designs with limited space.

3. Typical application scenarios
1. Wireless communication: LTE/5G base station receivers, WLAN access points, satellite communication terminals.
2. Test and measurement: spectrum analyzer, network analyzer, signal source front-end amplifier.
3. Radar system: automotive radar sensor, industrial rangefinder.
4. Internet of Things (IoT): low-power sensor nodes, remote monitoring equipment.