Mosfet MDU3603

$0.99

Mosfet MDU3603 MDU3603RH

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SKU: Original MDU3603 MDU3603RH 30V 67A 9.1mΩ Single P-Channel Trench Mosfet Categories: , Tags: ,

描述

MDU3603 MDU3603RH Single P-Channel Trench MOSFET 30V 67A 9.1mΩ

MDU3603 General Description

This Mosfet uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

1. VDS = -30V
2. ID = -67A @VGS = -10V
3. RDS(ON)
1. < 7.5mΩ @VGS = -20V
2. < 9.1mΩ @VGS = -10V
3. < 13.6mΩ @VGS = -5V

Applications
1. Load Switch
2. General purpose applications
3. Smart Module for Note PC Battery

1. Configuration Single
2. Process Technology TMOS
3. Channel Mode Enhancement
4. Channel Type P
5. Number of Elements per Chip 1
6. Maximum Drain Source Voltage (V) 30
7. Maximum Gate Source Voltage (V) +-25
8. Maximum Gate Threshold Voltage (V) 3
9. Maximum Continuous Drain Current (A) 67
10. Maximum Gate Source Leakage Current (nA) 100
11. Maximum IDSS (uA) 1
12. Maximum Drain Source Resistance (mOhm) 7.5@20V
13. Typical Gate Charge @ Vgs (nC) 38.4@10V
14. Typical Gate Charge @ 10V (nC) 38.4
15. Typical Input Capacitance @ Vds (pF) 1788@15V
16. Maximum Power Dissipation (mW) 2500
17. Typical Fall Time (ns) 53.2
18. Typical Rise Time (ns) 13
19. Typical Turn-Off Delay Time (ns) 61.6
20. Typical Turn-On Delay Time (ns) 15.3
21. Minimum Operating Temperature (°C) -55
22. Maximum Operating Temperature (°C) 150
23. Packaging Tape and Reel
24. Mounting Surface Mount
25. Package Height 1.1(Max)
26. Package Width 6.1(Max)
27. Package Length 5.1(Max)
28. PCB changed 8
29. Pin Count 8
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