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New Original MMBT2222ALT1 Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 225 mW Surface Mount SOT-23-3 (TO-236)

—-MMBT2222ALT1 Bipolar Transistors – BJT AF TRANS GP BJT NPN 40V 0.6A SOT-23

1. Product Overview

MMBT2222ALT1 is an NPN silicon transistor produced by ON Semiconductor, using SOT-23 (SC-59) surface mount package. The device is designed for general-purpose amplification, switching circuits and low-power applications, with high current gain and low saturation voltage drop characteristics, suitable for consumer electronics, communication equipment and industrial control fields.

Transistor Type: NPN
Current – Collector (Ic) (Max): 600 mA
Voltage – Collector Emitter Breakdown (Max): 40 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current – Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power – Max: 225 mW
Frequency – Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Device Package: SOT-23-3 (TO-236)
Base Product Number: MMBT2222

2. Core characteristics

• ประสิทธิภาพการทำงานทางไฟฟ้า
  1. Collector-base voltage (Vcbo): 60V
  2. Collector-emitter voltage (Vceo): 40V
  3. Emitter-base voltage (Vebo): 6V
  4. Collector current (Ic): 500mA (continuous)
  5. Collector power dissipation (Pc): 625mW (Ta=25°C)
  6. DC current gain (hFE): 100~300 (Vce=10V, Ic=10mA)
  7. Saturation voltage drop (Vce(sat)): 0.25V (typical, Ic=100mA, Ib=10mA)
  8. Operating temperature range: -65°C ~ 150°C (Ta)
• Packaging and installation
  1. Package type: SOT-23 (SC-59, surface mount, size 2.9mm × 1.3mm × 1.1mm)
  2. Installation method: surface mount technology (SMT)
• Functional advantages
  1. High current gain: hFE range 100~300, suitable for signal amplification.
  2. Low saturation voltage drop: 0.25V typical value, reducing switching loss.
  3. Compact package: SOT-23 package, saving PCB space.

3. Application areas

1. Consumer electronics: audio amplifier, power management, LED driver.
2. Communication equipment: signal modulation, RF amplification, switching circuit.
3. Industrial control: motor drive, sensor interface, relay drive.
4. Automotive electronics: in-vehicle entertainment system, lighting control, body electronic module.

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