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Original 29F2G08ABAEA 29F2G08ABAEA:E MT29F2G08ABAEAWP-IT:E 48-TFSOP FOR S9 Control board Nand Chip IC
Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#).
This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization.
This device has an internal 4-bit ECC that can be enabled using the GET/SET features. See Internal ECC and Spare Area Mapping for ECC for more information.
คุณสมบัติ
 • Open NAND Flash Interface (ONFI) 1.0-compliant1
 • Single-level cell (SLC) technology
 • Organization
 – Page size x8: 2112 bytes (2048 + 64 bytes)
 – Page size x16: 1056 words (1024 + 32 words)
 – Block size: 64 pages (128K + 4K bytes)
 – Plane size: 2 planes x 1024 blocks per plane
 – Device size: 2Gb: 2048 blocks
 • Asynchronous I/O performance
 – tRC/tWC: 20ns (3.3V), 25ns (1.8V)
 • Array performance
 – Read page: 25µs 3
 – Program page: 200µs (TYP: 1.8V, 3.3V)3
 – Erase block: 700µs (TYP)
 • Command set: ONFI NAND Flash Protocol
 • Advanced command set
 – Program page cache mode4
 – Read page cache mode 4
 – One-time programmable (OTP) mode
 – Two-plane commands 4
 – Interleaved die (LUN) operations
 – Read unique ID
 – Block lock (1.8V only)
 – Internal data move
 • Operation status byte provides software method for detecting
 – Operation completion
 – Pass/fail condition
 – Write-protect status
 • Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
 • WP# signal: Write protect entire device
 • First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management.
 • Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
 • RESET (FFh) required as first command after power-on
 • Alternate method of device initialization (Nand_Init) after power up (contact factory)
 • Internal data move operations supported within the plane from which data is read
 • Quality and reliability
 – Data retention: 10 years
 – Endurance: 100,000 PROGRAM/ERASE cycles
 • Operating voltage range
 – VCC: 2.7–3.6V
 – VCC: 1.7–1.95V
 • Operating temperature
 – Commercial: 0°C to +70°C
 – Industrial (IT): –40ºC to +85ºC
 – Automotive Industrial (AIT): –40°C to +85°C
 – Automotive (AAT): –40°C to +105°C
