Описание
MT29F4G08ABADAH4-IT:D MT29F4G08ABADAH4-IT TR MT29F4G08ABADAH4 557-1867-2 Industrial Grade 4GB NAND FLASH Memory IC 4Gbit Parallel 63-VFBGA (9×11)
Core Specifications
1. Product Type: NAND Flash memory chip, compliant with ONFI 1.0 standard.
2. Storage Capacity: 4Gb (512MB), organized as 512M x 8.
3. Interface Type: Parallel interface supporting high-speed asynchronous data transfer.
4. Package: 63-VFBGA (9x11mm surface-mount package), compatible with automated manufacturing.
Performance Metrics:
1. Page Structure: 2,112 bytes per page (2,048 bytes data + 64 bytes spare area) in x8 configuration; 1,056 bytes per page (1,024 bytes data + 32 bytes spare area) in x16 configuration.
2. Block Structure: 64 pages per block, 4,096 total blocks (dual-plane design with 2,048 blocks per plane).
3. Endurance: 100,000 program/erase cycles, 10-year data retention.
4. Operating Voltage: 2.7V–3.6V, optimized for low-power designs.
5. Temperature Range: -40°C to 85°C (industrial-grade wide temperature range), suitable for harsh environments.
Применение:
1. Embedded Systems: Industrial control, medical devices, automotive electronics requiring high-reliability storage.
2. Solid-State Storage: SSDs, memory cards, UFS modules for large-capacity non-volatile storage.
3. Mobile Devices: Smartphones, tablets, and other consumer electronics demanding high-density storage.
4. Networking Equipment: Routers, switches, and communication devices requiring rapid data access.
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