Описание
New Original SBC846BLT1G Bipolar (BJT) Transistor NPN 65 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
—SBC846BLT1G Транзистор: NPN, биполярный, 65В, 0,1А, 0,3Вт, SOT23
SBC846BLT1G Product Introduction
1. Product Overview
SBC846BLT1G is an NPN bipolar junction transistor (BJT) produced by ON Semiconductor, using SOT-23-3 (TO-236) surface mount package. This product is designed for low-power, high-frequency applications and is widely used in signal amplification, switching circuits, power management and other fields. It is known for its high gain, wide temperature range and reliability.
2. Core parameters
| Parameters | Ценить | Description |
| Transistor type | NPN | Bipolar junction transistor |
| Maximum collector current (Ic) | 100mA | Upper limit of continuous operating current |
| Maximum collector-emitter voltage (VCEO) | 65V | Collector-to-emitter withstand voltage |
| Maximum collector-base voltage (VCBO) | 80V | Collector-to-base withstand voltage |
| DC current gain (hFE) | Min. 200 (@2mA, 5V) | Typical value 200-400, high gain characteristics |
| Maximum power dissipation (Pd) | 300mW | Safe power consumption at 25°C environment |
| Transition frequency (fT) | 100MHz | High frequency performance indicators |
| Operating temperature range | -55°C to +150°C | Adapt to extreme environments |
| Упаковка | SOT-23-3 (TO-236) | Small surface mount package, size 3.04mm×2.64mm |
3. Product features
High-frequency performance: transition frequency 100MHz, suitable for radio frequency (RF) signal processing and high-speed switching circuits.
High-gain design: minimum DC current gain 200, ensuring signal amplification efficiency, suitable for audio and RF amplifiers.
Wide voltage range: VCEO 65V and VCBO 80V, suitable for a variety of power supply design requirements.
Low power consumption and energy saving: maximum power consumption 300mW, suitable for battery-powered or energy-saving devices.
Temperature stability: The operating temperature range is -55°C to +150°C, which meets the harsh environments such as industrial and automotive electronics.
Electrostatic protection–ESD level: Human body model (HBM)>4000V, machine model (MM)>400V, reducing the risk of electrostatic damage.
IV. Application areas
Amplifier circuit: audio amplifier, RF amplifier, providing low noise, high gain signal amplification.
Switching circuit: digital logic circuit (such as logic gate, counter), power switch, using fast switching characteristics.
Power management: voltage regulator, DC-DC converter, control voltage stable output.
Oscillation circuit: RF oscillator, clock signal generation, providing stable high frequency signal.
Sensor interface: amplify weak sensor signals (such as temperature and pressure sensors) to achieve accurate measurement.
