Product type: Dynamic random access memory (DRAM)
Technology type: DDR3L SDRAM (low power version DDR3)
Capacity: 2Gb (Organization structure: 128M × 16)
Interface: Parallel
Operating voltage: 1.283V ~ 1.45V (typical value 1.35V)
Package: FBGA-96 (size: 8mm × 14mm × 1.2mm, 96 pins)
Installation method: surface mount (SMD/SMT)

 1. Low power design: As a DDR3L device, the operating voltage is as low as 1.35V, which reduces power consumption by about 10% compared with standard DDR3 (1.5V), and is compatible with 1.5V mode.
2. High-performance timing: Supports multiple speed grades (such as -125), with a cycle time of 1.25ns at CL=11, corresponding to a data rate of 1600MT/s (DDR3-1600).
3. Automatic refresh (ASR): Reduce refresh power consumption.
4. Write leveling and output driver calibration: Optimize signal integrity.
5. Programmable CAS delay (CL/CWL): Support flexible timing configuration.
6. On-chip termination (ODT): Dynamically adjust signal impedance to improve signal quality.
7. Temperature adaptability
Commercial grade: 0°C ~ +95°C
Industrial grade: -40°C ~ +95°C
8. Maximum clock frequency: 800MHz
9. Access time: 13.75ns (typical value)
10. Refresh cycle:
At 95°C: 64ms (8192 cycles)
At 85°C to 95°C: 32ms (8192 cycles)
11. Supply current: 138mA (typical value)

 1. Automotive electronics: Applicable to high reliability scenarios such as in-vehicle infotainment systems and ADAS.
2. 3C digital: Mobile devices such as smartphones, tablets, and digital cameras.
3. Industrial control: Automation equipment, communication base stations, and other fields that require wide temperature operation.