1. Basic parameters
Manufacturer number: IPB031N08N5ATMA1
Product alias: IPB031N08N5
FET type: N-channel
Package/housing: TO-263-3, D²Pak (2 leads + tabs), TO-263AB
Drain-source voltage (Vdss): 80V
Current – continuous drain (Id) at 25°C: 120A (Tc)
Drive voltage: Maximum RdsOn is 6V, minimum RdsOn is 10V
On-resistance (maximum) at different Id and Vgs: 3.1 milliohms @100A, 10V
Vgs(th) (max) at different Id: 3.8V@108uA
Input capacitance (Ciss) (max) at different Vds: 6240pF@40V
Gate charge (Qg) (max) at different Vgs: 87nC@10V
Power dissipation (max): 167W (Tc)
Operating temperature: -55°C~175°C (TJ)

II. Product features
High-frequency switching performance: This MOSFET is suitable for high-frequency switching applications and has excellent switching speed and stability.
Low on-resistance: The maximum on-resistance is 3.1 milliohms, which helps to reduce power consumption and heat generation.
High reliability: The product undergoes strict quality control and testing to ensure stable operation in harsh environments.
Easy to install: It adopts TO-263-3 package, which is easy to integrate and install in electronic equipment.

III. Application field
Power management: It can be used in various power management circuits, such as DC-DC converters, AC-DC converters, etc.
Motor control: Applicable to motor drive and control circuits, providing stable current and voltage output.
Industrial automation: In industrial control systems, it can be used to realize functions such as signal acquisition, processing and transmission.
Automotive electronics: It can be used for power conversion and control circuits in automotive electronic systems.